 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Ordering number : ENA0214 2SK4044 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4044 Features * * * General-Purpose Switching Device Applications Low ON-resistance. Load switching applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings 60 20 100 400 50 150 --55 to +150 850 70 Unit V V A A W C C mJ A Note : *1 VDD=30V, L=200H, IAV=70A *2 L200H, Single pulse Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0V VDS=60V, VGS=0V VGS= 16V, VDS=0V Ratings min 60 1 typ max Unit V Marking : K4044 A 10 A Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 51607QA TI IM TC-00000688 No. A0214-1/4 2SK4044 Continued from preceding page. Parameter Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, ID=1mA VDS=10V, ID=50A ID=50A, VGS=10V ID=50A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=30V, VGS=10V, ID=100A VDS=30V, VGS=10V, ID=100A VDS=30V, VGS=10V, ID=100A IS=100A, VGS=0V Ratings min 1.2 45 75 3.3 4.7 12500 1200 950 80 630 860 750 220 31 55 0.9 1.2 4.3 6.6 typ max 2.6 Unit V S m m pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7002-001 8.2 7.8 6.2 3 0.4 0.2 0.6 4.2 1.2 8.4 10.0 1.0 2.54 1 2 1.0 2.54 0.3 0.6 5.08 10.0 6.0 0.7 6.2 5.2 7.8 2.5 1 : Gate 2 : Source 3 : Drain SANYO : ZP Switching Time Test Circuit VIN 10V 0V VIN ID=50A RL=0.6 VDD=30V Avalanche Resistance Test Circuit L 50 D PW=10s D.C.1% VOUT 2SK4044 10V 0V G 50 VDD 2SK4044 P.G 50 S No. A0214-2/4 2SK4044 200 ID -- VDS 8V 6V Tc=25C 180 160 200 ID -- VGS VDS=10V 4V Drain Current, ID -- A 180 160 Drain Current, ID -- A 140 120 100 80 60 40 20 0 0 0.2 10 V 140 120 100 80 60 40 20 VGS=3V 0.4 0.6 0.8 1.0 1.2 1.4 IT12242 0 1.0 1.5 2.0 2.5 25 --2 C 5C 3.0 Tc =7 5 C 3.5 4.0 IT10468 Drain-to-Source Voltage, VDS -- V 8 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 8 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 7 ID=50A Single pulse Single pulse 7 6 5 4 3 2 1 0 --50 6 5 VG 0A, I D=5 4V S= 4 Tc=75C 0A, I D=5 =10V VGS 3 25C --25C 2 1 2 3 4 5 6 7 8 9 10 IT12243 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 2 Case Temperature, Tc -- C 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 IT12244 yfs -- ID IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S 100 7 5 3 2 10 7 5 3 2 VDS=10V Single pulse C 25 = Tc 5 --2 C C 75 Source Current, IS -- A 1.0 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 3 2 5 7 100 IT12245 3 0 0.3 Tc=7 5 C 25C --25C 0.6 0.9 1.2 1.5 IT10472 SW Time -- ID td(off) Ciss, Coss, Crss -- VDS f=1MHz Ciss Diode Forward Voltage, VSD -- V VDD=30V VGS=10V 2 Switching Time, SW Time -- ns Ciss, Coss, Crss -- pF 1000 7 5 3 2 10k 7 5 3 2 tf tr 100 7 5 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT10473 td(on) 1k Coss Crss 7 5 0 5 10 15 20 25 30 IT10474 Drain Current, ID -- A Drain-to-Source Voltage, VDS -- V No. A0214-3/4 2SK4044 10 9 VGS -- Qg VDS=30V ID=100A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 50 100 150 200 250 IT10475 1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 ASO IDP=400A ID=100A PW10s 10 1m 1 10 0ms 0m DC s op er ati on 10 s 0 s s Operation in this area is limited by RDS(on). 0.1 0.1 Tc=25C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 Total Gate Charge, Qg -- nC 60 Drain-to-Source Voltage, VDS -- V 120 5 7 100 IT12246 PD -- Tc Avalanche Energy derating factor -- % EAS -- Ta Allowable Power Dissipation, PD -- W 50 100 40 80 30 60 20 40 10 20 0 0 20 40 60 80 100 120 140 160 0 0 25 50 75 100 125 150 175 IT10478 Case Temperature, Tc -- C IT10477 Ambient Temperature, Ta -- C Note on usage : Since the 2SK4044 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2007. Specifications and information herein are subject to change without notice. PS No. A0214-4/4 |
Price & Availability of 2SK4044
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |